Short-circuit Failure Mechanism of SiC Double-trench MOSFET

被引：0

作者：

Hu, Dongqing ^{[1
]}

Xia, Tian ^{[1
]}

Zhou, Xintian ^{[1
]}

Jia, Yunpeng ^{[1
]}

Wu, Yu ^{[1
]}

Yin, Shan ^{[2
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

[2] China Acad Engn Phys, Inst Elect Engn, Mianyang, Sichuan, Peoples R China

来源：

PROCEEDINGS OF 2020 IEEE 5TH INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC 2020) | 2020年

关键词：

Silicon Carbide double-trench MOSFET; power semiconductor reliability; short-circuit;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The purpose of this paper is to explore the failure mechanism of 650V state-of-the-art SiC double-trench MOSFETs under short-circuit (SC) test. The experimental results demonstrate drain voltage (VDS) has a pronounced influence on the SC capability of the device, and different VDS will lead to discrepant failure mechanisms. The gate-to-source oxide rupture is most likely to occur when a lower VDS is imposed on the studied device. However, the breakdown of the gate-to-source and drain-to-source takes place simultaneously with a higher VDS. And the reason will be discussed in this work.

引用

页码：696 / 699

页数：4

共 50 条

[21] A Novel SiC Trench MOSFET with Unilateral Deep P Buried Layer for Improved Short-circuit Capability
Wu, Yangyang
Wang, Kuan
Yuan, Jun
Guo, Fei
Cheng, Zhijie
Chen, Wei
Xin, Guoqing
Wang, Zhiqiang
2024 IEEE 2ND INTERNATIONAL CONFERENCE ON POWER SCIENCE AND TECHNOLOGY, ICPST 2024, 2024, : 89 - 93
[22] SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance
Yu, Hengyu
Shi, Limeng
Bhattacharya, Monikuntala
Jin, Michael
Qian, Jiashu
Agarwal, Anant K.
ELECTRONICS, 2023, 12 (23)
[23] Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs
Yu, Renze
Jahdi, Saeed
Mellor, Phil
Yang, Juefei
Shen, Chengjun
Liu, Li
Alatise, Olayiwola
Ortiz-Gonzalez, Jose
2022 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN EUROPE (WIPDA EUROPE), 2022,
[24] Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET
Li, Xuan
Tong, Xing
Hu, Rui
Wen, Yi
Zhu, Hao
Deng, Xiaochuan
Sun, Yongkui
Chen, Wanjun
Bai, Song
Zhang, Bo
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2021, 9 (02) : 2147 - 2154
[25] Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition
Li, Xu
Deng, Xiaochuan
Liao, Zhengxiang
Li, Xuan
Jia, Renxu
Zhang, Bo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 72 (03) : 1259 - 1263
[26] Short-Circuit Characteristics of Asymmetry Trench (AT) MOSFET and Associative Failure Mechanisms over Wide Ambient Temperature
Ding, Xiaofeng
Peng, Lyuzhang
Zhao, Yujia
Yang, Kun
Cui, Huifeng
Shan, Zhenyu
Yang, Yanyong
Lyu, Gang
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 216 - 219
[27] Dynamic Characterization Assessment on Series Short-Circuit of SiC MOSFET
Zhang J.
Zhang T.
Feng Y.
Song M.
Tan G.
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2021, 36 (12): : 2446 - 2458
[28] Research on Short-circuit Characteristics and Overcurrent Protection of SiC MOSFET
Wang Z.
Tong C.
Huang W.
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2020, 40 (18): : 5751 - 5759
[29] Dependence of Short-Circuit Withstand Capability of SiC MOSFETs on Short-Circuit Failure Time
Shoji, Tomoyuki
Kuwahara, Makoto
Usui, Masanori
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (10) : 11739 - 11747
[30] Failure mechanism of Trench IGBT under short-circuit after turn-off
Benmansour, A.
Azzopardi, S.
Martin, J. C.
Woirgard, E.
MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1778 - 1783

← 1 2 3 4 5 →