Short-circuit Failure Mechanism of SiC Double-trench MOSFET

被引：0

作者：

Hu, Dongqing ^{[1
]}

Xia, Tian ^{[1
]}

Zhou, Xintian ^{[1
]}

Jia, Yunpeng ^{[1
]}

Wu, Yu ^{[1
]}

Yin, Shan ^{[2
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

[2] China Acad Engn Phys, Inst Elect Engn, Mianyang, Sichuan, Peoples R China

来源：

PROCEEDINGS OF 2020 IEEE 5TH INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC 2020) | 2020年

关键词：

Silicon Carbide double-trench MOSFET; power semiconductor reliability; short-circuit;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The purpose of this paper is to explore the failure mechanism of 650V state-of-the-art SiC double-trench MOSFETs under short-circuit (SC) test. The experimental results demonstrate drain voltage (VDS) has a pronounced influence on the SC capability of the device, and different VDS will lead to discrepant failure mechanisms. The gate-to-source oxide rupture is most likely to occur when a lower VDS is imposed on the studied device. However, the breakdown of the gate-to-source and drain-to-source takes place simultaneously with a higher VDS. And the reason will be discussed in this work.

引用

页码：696 / 699

页数：4

共 50 条

[41] 3.3-kV SiC MOSFET Performance and Short-Circuit Capability
Xing, Diang
Xie, Chen
Wang, Ke
Liu, Tianshi
Hu, Boxue
Wang, Jin
Agarwal, Anant
Singh, Ranbir
Atcitty, Stanley
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2020,
[42] Short-Circuit Characterization and Protection of 10-kV SiC MOSFET
Ji, Shiqi
Laitinen, Marko
Huang, Xingxuan
Sun, Jingjing
Giewont, William
Wang, Fei
Tolbert, Leon M.
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (02) : 1755 - 1764
[43] SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability
Zhang, Jinping
Wu, Qinglin
Chen, Zixun
Zou, Hua
Zhang, Bo
CHINESE JOURNAL OF ELECTRONICS, 2024, 33 (05) : 1127 - 1136
[44] 3300-V SiC MOSFET Short-Circuit Reliability and Protection
Xing, Diang
Lyu, Xintong
Liu, Jiawei
Xie, Chen
Agarwal, Anant
Wang, Jin
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), 2021, : 1262 - 1266
[45] On the short-circuit and avalanche ruggedness reliability assessment of SiC MOSFET modules
Ionita, Claudiu
Nawaz, Muhammad
Ilves, Kalle
MICROELECTRONICS RELIABILITY, 2017, 71 : 6 - 16
[46] Short-circuit Performance of Multi-chip SiC MOSFET Modules
Kadavelugu, Arun
Aeloiza, Eddy
Belcastro, Christopher
2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2017, : 285 - 290
[47] A Digital Signal Processing Based Detection Circuit for Short-Circuit Protection of SiC MOSFET
Lee, Seungjik
Kim, Kihyun
Shim, Minseob
Nam, Ilku
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (12) : 13379 - 13382
[48] Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses
Yao, Kailun
Yano, Hiroshi
Tadano, Hiroshi
Iwamuro, Noriyuki
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4328 - 4334
[49] Single-Event Effects in SiC Double-Trench MOSFETs
Zhou, Xintian
Tang, Yun
Jia, Yunpeng
Hu, Dongqing
Wu, Yu
Xia, Tian
Gong, Hao
Pang, Haoyang
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (11) : 2312 - 2318
[50] Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs
Yi Huang
Qiurui Chen
Rongyao Ma
Kaifeng Tang
Qi Wang
Hongsheng Zhang
Ji Ding
Dandan Xu
Sheng Gao
Genquan Han
Journal of Semiconductors, 2024, 45 (12) : 139 - 147

← 1 2 3 4 5 →