Evidence for deep recombination centers in high-purity silicon from photoluminescence measurements at elevated temperatures

被引：0

作者：

Alex, V ^{[1
]}

Weber, J ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

silicon; recombination center; photoluminescence;

D O I：

10.1016/S0921-4526(99)00482-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence spectra of high-purity crystalline silicon samples are measured for temperatures up to 1000 K. The room-temperature lifetime of the near-edge-photoluminescence is in agreement with a coulomb-enhanced radiative decay of free excitons. However, the increase in lifetime with temperature asks for a Shockley-Read-Hall recombination process, which involves a deep-defect of unknown origin. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：375 / 378

页数：4

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