RECOMBINATION LIFETIMES IN HIGH-PURITY SILICON AT LOW TEMPERATURES

被引：5
|
作者：
LEADON, R
NABER, JA
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 06期
关键词：
D O I：
10.1063/1.1658046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2633 / &
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