RECOMBINATION LIFETIMES IN HIGH-PURITY SILICON AT LOW TEMPERATURES

被引：5

作者：

LEADON, R

NABER, JA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 06期

关键词：

D O I：

10.1063/1.1658046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2633 / &

共 50 条

[41] PREPARATION OF HIGH-PURITY SILICON FROM SILANE
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