Evidence for deep recombination centers in high-purity silicon from photoluminescence measurements at elevated temperatures

被引：0
|
作者：
Alex, V [1 ]
Weber, J [1 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷
关键词：
silicon; recombination center; photoluminescence;
D O I：
10.1016/S0921-4526(99)00482-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoluminescence spectra of high-purity crystalline silicon samples are measured for temperatures up to 1000 K. The room-temperature lifetime of the near-edge-photoluminescence is in agreement with a coulomb-enhanced radiative decay of free excitons. However, the increase in lifetime with temperature asks for a Shockley-Read-Hall recombination process, which involves a deep-defect of unknown origin. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：375 / 378
页数：4
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