Evidence for deep recombination centers in high-purity silicon from photoluminescence measurements at elevated temperatures

被引：0
|
作者：
Alex, V [1 ]
Weber, J [1 ]
机构：
[1] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷
关键词：
silicon; recombination center; photoluminescence;
D O I：
10.1016/S0921-4526(99)00482-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoluminescence spectra of high-purity crystalline silicon samples are measured for temperatures up to 1000 K. The room-temperature lifetime of the near-edge-photoluminescence is in agreement with a coulomb-enhanced radiative decay of free excitons. However, the increase in lifetime with temperature asks for a Shockley-Read-Hall recombination process, which involves a deep-defect of unknown origin. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：375 / 378
页数：4
相关论文
共 50 条
  • [41] Deformation mechanisms in high-purity Fe-50Cr(-5W) alloys at elevated temperatures
    Kako, K
    Isozaki, S
    Takaki, S
    Abiko, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 167 (02): : 481 - 494
  • [42] Role of tungsten for the mechanical properties of high-purity Fe-50 mass% Cr alloys at elevated temperatures
    Isozaki, S
    Abiko, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 160 (02): : 469 - 479
  • [43] Deformation mechanisms in high-purity Fe-50Cr(-5W) alloys at elevated temperatures
    Tohoku Univ, Sendai, Japan
    Phys Status Solidi A, 2 (481-494):
  • [44] SIZE EFFECT IN ELECTRICAL RESISTIVITY MEASUREMENTS ON SINGLE CRYSTALS OF HIGH-PURITY TIN AT LIQUID HELIUM TEMPERATURES
    KUNZLER, JE
    RENTON, CA
    PHYSICAL REVIEW, 1957, 108 (06): : 1397 - 1397
  • [45] Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC
    Z.-Q. Fang
    B. Claflin
    D.C. Look
    G.C. Farlow
    Journal of Electronic Materials, 2007, 36 : 307 - 311
  • [46] PRECISION-MEASUREMENTS OF IONIZATION ENERGY AND ITS TEMPERATURE VARIATION IN HIGH-PURITY SILICON RADIATION DETECTORS
    RYAN, RD
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (01) : 473 - 480
  • [47] Effects of electron irradiation on deep centers in high-purity semi-insulating 6H-SiC
    Fang, Z.-Q.
    Claflin, B.
    Look, D. C.
    Farlow, G. C.
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (04) : 307 - 311
  • [48] Recovering high-purity silicon from mono-/poly-silicon cutting loss slurry
    Guo, Jing
    Xing, Peng-Fei
    Tu, Gan-Feng
    Qi, Yang
    Cailiao Kexue yu Gongyi/Material Science and Technology, 2011, 19 (04): : 103 - 106
  • [49] EVIDENCE FROM ELECTRICAL-TRANSPORT AND PHOTOLUMINESCENCE SPECTROSCOPY OF A BAND OF LOCALIZED DEEP DONORS IN HIGH-PURITY N-TYPE INP GROWN BY CHEMICAL-BEAM EPITAXY
    BENZAQUEN, R
    BENZAQUEN, M
    CHARBONNEAU, S
    POOLE, PJ
    RAO, TS
    LACELLE, C
    ROTH, AP
    LEONELLI, R
    PHYSICAL REVIEW B, 1994, 50 (23): : 16964 - 16972
  • [50] High-purity lignin from selective biomass fractionation with ternary deep eutectic solvents
    Ee, Liang Ying
    Tan, Yong Kuok
    Miao, Jiapei
    Chu, Hui Ting
    Li, Sam Fong Yau
    GREEN CHEMISTRY, 2023, 25 (08) : 3137 - 3151
12345