A drift-diffusion model for semiconductors with temperature effects

被引：6
|
作者：
Xu, Xiangsheng [1 ]
机构：
[1] Mississippi State Univ, Dept Math & Stat, Mississippi State, MS 39762 USA
来源：
PROCEEDINGS OF THE ROYAL SOCIETY OF EDINBURGH SECTION A-MATHEMATICS | 2009年 / 139卷
关键词：
EQUATIONS; SYSTEM;
D O I：
10.1017/S0308210507001187
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
We establish an existence theorem for a stationary semiconductor model which takes into account the current generated by the gradient of the temperature.
引用
收藏
页码：1101 / 1119
页数：19
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