A drift-diffusion model for semiconductors with temperature effects

被引：6

作者：

Xu, Xiangsheng ^{[1
]}

机构：

[1] Mississippi State Univ, Dept Math & Stat, Mississippi State, MS 39762 USA

来源：

PROCEEDINGS OF THE ROYAL SOCIETY OF EDINBURGH SECTION A-MATHEMATICS | 2009年 / 139卷

关键词：

EQUATIONS; SYSTEM;

D O I：

10.1017/S0308210507001187

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

We establish an existence theorem for a stationary semiconductor model which takes into account the current generated by the gradient of the temperature.

引用

页码：1101 / 1119

页数：19

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