A drift-diffusion model for semiconductors with temperature effects

被引:6
|
作者
Xu, Xiangsheng [1 ]
机构
[1] Mississippi State Univ, Dept Math & Stat, Mississippi State, MS 39762 USA
关键词
EQUATIONS; SYSTEM;
D O I
10.1017/S0308210507001187
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
We establish an existence theorem for a stationary semiconductor model which takes into account the current generated by the gradient of the temperature.
引用
收藏
页码:1101 / 1119
页数:19
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