High-speed, short-channel polycrystalline silicon thin-film transistors

被引：43

作者：

Brotherton, SD ^{[1
]}

Glasse, C ^{[1
]}

Glaister, C ^{[1
]}

Green, P ^{[1
]}

Rohlfing, F ^{[1
]}

Ayres, JR ^{[1
]}

机构：

[1] Philips Res Labs, Redhill RH1 5HA, Surrey, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.1639137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 mum, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of short-channel TFTs was shown to have a standard deviation of better then 10%, even for channel widths as small as 4 mum. The 0.5 mum TFTs have been incorporated into a 15-stage complementary pair metal-oxide-Si transistor ring oscillator, which, at a supply voltage of 3 V, operated with a delay/stage of similar to0.1 ns. (C) 2004 American Institute of Physics.

引用

页码：293 / 295

页数：3

共 50 条

[41] Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors
Shieh, Ming-Shan
Sang, Jen-Yi
Chen, Chih-Yang
Wang, Shen-De
Lei, Tan-Fu
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3159 - 3164
[42] Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors
Hastas, NA
Archontas, N
Dimitriadis, CA
Kamarinos, G
Nikolaidis, T
Georgoulas, N
Thanailakis, A
MICROELECTRONICS RELIABILITY, 2005, 45 (02) : 341 - 348
[43] Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors
Huang, C. -F.
Yang, Y. -J.
Peng, C. -Y.
Yuan, F.
Liu, C. W.
APPLIED PHYSICS LETTERS, 2006, 89 (10)
[44] Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors
Wang, Zhenze
Luo, Li
Wang, Yiming
Zhang, Jiawei
Song, Aimin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (02) : 561 - 566
[45] N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS USING AS-DEPOSITED POLYCRYSTALLINE SILICON AND ION DOPING
LIM, HJ
RYU, BY
JANG, J
APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2888 - 2890
[46] A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects
Jacunski, MD
Shur, MS
Owusu, AA
Ytterdal, T
Hack, M
Iñíguez, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) : 1146 - 1158
[47] 1-μm Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
Choi, Ji Hun
Yang, Jong-Heon
Pi, Jae-Eun
Hwang, Chi-Young
Choi, Kyunghee
Kim, Hee-Ok
Kwon, Oh-Sang
Hwang, Chi-Sun
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (10) : 1398 - 1400
[48] Channel Film Thickness Effect of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
Ma, William Cheng-Yu
Chiang, Tsung-Yu
Yeh, Chi-Ruei
Chao, Tien-Sheng
Lei, Tan-Fu
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) : 1268 - 1272
[49] Polycrystalline silicon thin-film transistors: A continuous evolving technology
Fortunato, G
THIN SOLID FILMS, 1997, 296 (1-2) : 82 - 90
[50] Dopant and defect interactions in polycrystalline silicon thin-film transistors
Valletta, A., 1600, American Institute of Physics Inc. (97):

← 1 2 3 4 5 →