High-speed, short-channel polycrystalline silicon thin-film transistors

被引：43

作者：

Brotherton, SD ^{[1
]}

Glasse, C ^{[1
]}

Glaister, C ^{[1
]}

Green, P ^{[1
]}

Rohlfing, F ^{[1
]}

Ayres, JR ^{[1
]}

机构：

[1] Philips Res Labs, Redhill RH1 5HA, Surrey, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.1639137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 mum, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of short-channel TFTs was shown to have a standard deviation of better then 10%, even for channel widths as small as 4 mum. The 0.5 mum TFTs have been incorporated into a 15-stage complementary pair metal-oxide-Si transistor ring oscillator, which, at a supply voltage of 3 V, operated with a delay/stage of similar to0.1 ns. (C) 2004 American Institute of Physics.

引用

页码：293 / 295

页数：3

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