High-speed, short-channel polycrystalline silicon thin-film transistors

Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 mum, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of short-channel TFTs was shown to have a standard deviation of better then 10%, even for channel widths as small as 4 mum. The 0.5 mum TFTs have been incorporated into a 15-stage complementary pair metal-oxide-Si transistor ring oscillator, which, at a supply voltage of 3 V, operated with a delay/stage of similar to0.1 ns. (C) 2004 American Institute of Physics.