Substrate Choice and Thermal Optimization of a Half-bridge Power Module based on Chip Scale GaN HEMTs

被引：0

作者：

Acuna, Javier ^{[1
]}

Kallfass, Ingmar ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Robust Power Semicond Syst, Pfaffenwaldring 47, Stuttgart, Germany

来源：

2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年

关键词：

Cooling; Emerging technology; Gallium Nitride (GaN); Packaging; Reliability; Thermal design; TEMPERATURE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Packages of commercial Gallium-Nitride power semiconductors present increasingly small dimensions to enable low parasitic inductance, increasing the heat flux density of the package and the challenges associated with their thermal management. This paper compares between Printed Circuit Boards and Direct Copper Bonded as substrates for a Gallium Nitride based half-bridge from a thermal and reliability point of view. The layout for both substrates was numerically optimized and a compact thermal model is proposed to compare both substrates. Measurement results confirm the modelling approach. Both substrates were also analysed regarding their maximum operating temperature and expected thermal cycling capability.

引用

页数：10

共 50 条

[1] Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs
Kagadey, V.A.
Kodorova, I.Y.
Polyntsev, E.S.
Russian Microelectronics, 2024, 53 (03) : 268 - 275
[2] THERMAL OPTIMIZATION OF A SILICON CARBIDE, HALF-BRIDGE POWER MODULE
Moreno, Gilberto
Major, Joshua
DeVoto, Douglas
Khan, Faisal
Narumanchi, Sreekant
Feng, Xuhui
Paret, Paul
PROCEEDINGS OF ASME 2022 INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS, INTERPACK2022, 2022,
[3] GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate
Kuring, Carsten
Wolf, Mihaela
Geng, Xiaomeng
Hilt, Oliver
Bocker, Jan
Wurfl, Joachim
Dieckerhoff, Sibylle
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (10) : 11896 - 11910
[4] Reduction of the Crosstalk Conduction Effect of parallel GaN HEMTs in Half-Bridge
Teu, Jean-Sylvio Ngoua
Le, Thanh-Long
2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 3139 - 3144
[5] Stacked DBC Cavitied Substrate for a 15-kV Half-bridge Power Module
Deshpande, Amol
Luo, Fang
Iradukunda, Ange
Huitink, David
Boteler, Lauren
2019 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP), 2019, : 12 - 17
[6] Reliable Integration of a high performance multi-chip half-bridge SiC power module
Mouawad, Bassem
Li, Jianfeng
Castellazzi, Alberto
Johnson, C. Mark
2016 6TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC), 2016,
[7] A New Method of Switching Loss Evaluation for GaN HEMTs in Half-Bridge Configuration
Wen, Hao
Zhang, Yajing
Jiao, Dong
Lai, Jih-Sheng
2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 647 - 651
[8] Multi-Chip SiC DMOSFET Half-Bridge Power Module for High Temperature Operation
Funaki, Tsuyoshi
Sasagawa, Masashi
Nakamura, Takashi
2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2012, : 2525 - 2529
[9] Thermal analysis of the half-bridge IGBT power module with analytical, numerical and experimental methods
Popovic, Jelena
Milanovic, Miro
Dolinar, Drago
Klopcic, Beno
PRZEGLAD ELEKTROTECHNICZNY, 2011, 87 (03): : 145 - 148
[10] Turn-on Losses Optimization for Medium Power SiC MOSFET Half-bridge Module
To, Pham Ha Trieu
Kayser, Felix
Eckel, Hans-Guenter
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE), 2022,

← 1 2 3 4 5 →