Substrate Choice and Thermal Optimization of a Half-bridge Power Module based on Chip Scale GaN HEMTs

被引：0

作者：

Acuna, Javier ^{[1
]}

Kallfass, Ingmar ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Robust Power Semicond Syst, Pfaffenwaldring 47, Stuttgart, Germany

来源：

2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年

关键词：

Cooling; Emerging technology; Gallium Nitride (GaN); Packaging; Reliability; Thermal design; TEMPERATURE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Packages of commercial Gallium-Nitride power semiconductors present increasingly small dimensions to enable low parasitic inductance, increasing the heat flux density of the package and the challenges associated with their thermal management. This paper compares between Printed Circuit Boards and Direct Copper Bonded as substrates for a Gallium Nitride based half-bridge from a thermal and reliability point of view. The layout for both substrates was numerically optimized and a compact thermal model is proposed to compare both substrates. Measurement results confirm the modelling approach. Both substrates were also analysed regarding their maximum operating temperature and expected thermal cycling capability.

引用

页数：10

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