Turn-on Losses Optimization for Medium Power SiC MOSFET Half-bridge Module

被引：0

作者：

To, Pham Ha Trieu ^{[1
]}

Kayser, Felix ^{[1
]}

Eckel, Hans-Guenter ^{[1
]}

机构：

[1] Univ Rostock, Albert Einstein Str 2, D-18059 Rostock, Germany

来源：

2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE) | 2022年

关键词：

Driver concepts; MOSFET; Silicon Carbide (SiC); Switching losses;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper explains the mechanism of the parasitic turn-on (PTO) effect in a medium power SiC MOSFET half-bridge module and the relation between it and the reverse-recovery process of MOSFET's body diode. Based on that knowledge, a detail practical turn-on losses optimization process for medium power SiC MOSFET modules using PTO is presented. To quantify the stability of this method, some quantitative metrics are suggested to measure the critical values' sensitivity. The experimental measurements show that turn-on losses can be reduced 50% lower than conventional R-gon tuning method.

引用

页数：11

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