Turn-on Losses Optimization for Medium Power SiC MOSFET Half-bridge Module

被引：0
|
作者：
To, Pham Ha Trieu [1 ]
Kayser, Felix [1 ]
Eckel, Hans-Guenter [1 ]
机构：
[1] Univ Rostock, Albert Einstein Str 2, D-18059 Rostock, Germany
来源：
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE) | 2022年
关键词：
Driver concepts; MOSFET; Silicon Carbide (SiC); Switching losses;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper explains the mechanism of the parasitic turn-on (PTO) effect in a medium power SiC MOSFET half-bridge module and the relation between it and the reverse-recovery process of MOSFET's body diode. Based on that knowledge, a detail practical turn-on losses optimization process for medium power SiC MOSFET modules using PTO is presented. To quantify the stability of this method, some quantitative metrics are suggested to measure the critical values' sensitivity. The experimental measurements show that turn-on losses can be reduced 50% lower than conventional R-gon tuning method.
引用
收藏
页数：11
相关论文
共 50 条
  • [11] High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
    Chen, Yue
    Lei, Guangyin
    Lu, Guo-Quan
    Mei, Yun-Hui
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 966 - 971
  • [12] Clean Switching of SiC MOSFET Half-Bridge Module with Soft-Ferrite Dual Cores
    Pham Ha Trieu To
    Eckel, Hans-Guenter
    2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE, 2023,
  • [13] Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module
    Liu, Yong
    Zhao, Zhenyu
    Wang, Wensong
    Lai, Jih-Sheng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4040 - 4045
  • [14] First 1.7 kV all-SiC half-bridge power module
    O'Shea, Paul
    Electronic Products, 2014, 56 (11):
  • [15] Modelling and optimization of SiC MOSFET switching voltage and current overshoots in a half-bridge configuration
    Wang, Lina
    Ma, Haobo
    Qiu, Hongcheng
    Yuan, Kai
    Liu, Zhuang
    Cao, Guoen
    IET Power Electronics, 2022, 14 (09) : 1684 - 1699
  • [16] Modelling and optimization of SiC MOSFET switching voltage and current overshoots in a half-bridge configuration
    Wang, Lina
    Ma, Haobo
    Qiu, Hongcheng
    Yuan, Kai
    Liu, Zhuang
    Cao, Guoen
    IET POWER ELECTRONICS, 2021, 14 (09) : 1684 - 1699
  • [17] Performance Analysis of a SiC MOSFET Half Bridge Power Module with a Miller Clamp
    Martin, Daniel
    Curbow, W. Austin
    McNutt, Ty
    2017 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP), 2017,
  • [18] Measurement of Circuit Parasitics of SiC MOSFET in a Half-Bridge Configuration
    Roy, Shamibrota Kishore
    Basu, Kaushik
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2022, 37 (10) : 11911 - 11926
  • [19] Design of a High-Density, Diode-Less 1.2 kV, 90 A SiC MOSFET Half-Bridge Power Module
    DiMarino, Christina
    Zhang, Wenli
    Burgos, Rolando
    Boroyevich, Dushan
    WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 210 - 214
  • [20] Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module
    Deshpande A.
    Paul R.
    Imran Emon A.
    Yuan Z.
    Peng H.
    Luo F.
    Power Electronic Devices and Components, 2022, 3
12345