Turn-on Losses Optimization for Medium Power SiC MOSFET Half-bridge Module

This paper explains the mechanism of the parasitic turn-on (PTO) effect in a medium power SiC MOSFET half-bridge module and the relation between it and the reverse-recovery process of MOSFET's body diode. Based on that knowledge, a detail practical turn-on losses optimization process for medium power SiC MOSFET modules using PTO is presented. To quantify the stability of this method, some quantitative metrics are suggested to measure the critical values' sensitivity. The experimental measurements show that turn-on losses can be reduced 50% lower than conventional R-gon tuning method.