Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions

被引：1

作者：

Avrutin, VS ^{[1
]}

Agafonov, YA

Vyatkin, AF

Zinenko, VI

Izyumskaya, NF

Irzhak, DV

Roshchupkin, DV

Steinman, ÉA

Vdovin, VI

Yugova, TG

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Oblast, Russia

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia

[3] Inst Chem Problems Microelect, Moscow 117571, Russia

[4] State Res Inst Rare Met Ind, Moscow 119017, Russia

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1682335

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pseudomorphic Si0.76Ge0.24/Si heterostructures grown by molecular-beam epitaxy were irradiated with 350-keV Ge+ ions at a temperature of 400degreesC so that the peak of the ions' energy losses was located within the silicon substrate (deeper than the SiGe-Si interface). The effect of ion implantation on the relaxation of elastic stresses and the defect structure formed as a result of postimplantation annealing is studied. It is found that annealing at a temperature even as low as 600degreesC makes it possible to ensure a very high degree of relaxation of elastic stresses in the heterostructure and a comparatively low density of threading dislocations in the SiGe layer (<10(5) cm(-2)). The results obtained make it possible to suggest a method for the formation of thin SiGe/Si layers that feature a high degree of relaxation, low density of threading dislocations, and a good surface morphology. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：313 / 318

页数：6

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