Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions

被引：1
|
作者：
Avrutin, VS [1 ]
Agafonov, YA
Vyatkin, AF
Zinenko, VI
Izyumskaya, NF
Irzhak, DV
Roshchupkin, DV
Steinman, ÉA
Vdovin, VI
Yugova, TG
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Oblast, Russia
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia
[3] Inst Chem Problems Microelect, Moscow 117571, Russia
[4] State Res Inst Rare Met Ind, Moscow 119017, Russia
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1682335
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Pseudomorphic Si0.76Ge0.24/Si heterostructures grown by molecular-beam epitaxy were irradiated with 350-keV Ge+ ions at a temperature of 400degreesC so that the peak of the ions' energy losses was located within the silicon substrate (deeper than the SiGe-Si interface). The effect of ion implantation on the relaxation of elastic stresses and the defect structure formed as a result of postimplantation annealing is studied. It is found that annealing at a temperature even as low as 600degreesC makes it possible to ensure a very high degree of relaxation of elastic stresses in the heterostructure and a comparatively low density of threading dislocations in the SiGe layer (<10(5) cm(-2)). The results obtained make it possible to suggest a method for the formation of thin SiGe/Si layers that feature a high degree of relaxation, low density of threading dislocations, and a good surface morphology. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：313 / 318
页数：6
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