Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions

被引：1
|
作者：
Avrutin, VS [1 ]
Agafonov, YA
Vyatkin, AF
Zinenko, VI
Izyumskaya, NF
Irzhak, DV
Roshchupkin, DV
Steinman, ÉA
Vdovin, VI
Yugova, TG
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Oblast, Russia
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Oblast, Russia
[3] Inst Chem Problems Microelect, Moscow 117571, Russia
[4] State Res Inst Rare Met Ind, Moscow 119017, Russia
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1682335
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Pseudomorphic Si0.76Ge0.24/Si heterostructures grown by molecular-beam epitaxy were irradiated with 350-keV Ge+ ions at a temperature of 400degreesC so that the peak of the ions' energy losses was located within the silicon substrate (deeper than the SiGe-Si interface). The effect of ion implantation on the relaxation of elastic stresses and the defect structure formed as a result of postimplantation annealing is studied. It is found that annealing at a temperature even as low as 600degreesC makes it possible to ensure a very high degree of relaxation of elastic stresses in the heterostructure and a comparatively low density of threading dislocations in the SiGe layer (<10(5) cm(-2)). The results obtained make it possible to suggest a method for the formation of thin SiGe/Si layers that feature a high degree of relaxation, low density of threading dislocations, and a good surface morphology. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：313 / 318
页数：6
相关论文
共 50 条
  • [31] LOW-TEMPERATURE GROWTH OF GE ON SI(100)
    EAGLESHAM, DJ
    CERULLO, M
    APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2276 - 2278
  • [32] LOW-TEMPERATURE MUONIUM DEPOLARIZATION IN SI AND GE
    PATTERSON, BD
    HOLZSCHUH, E
    KIEFL, RF
    BLAZEY, KW
    ESTLE, TL
    HYPERFINE INTERACTIONS, 1984, 18 (1-4): : 599 - 602
  • [33] Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures
    Dong, Yuanwei
    Mooney, Patricia M.
    Cai, Feiyang
    Anjum, Dalaver
    Ur-Rehman, Naeem
    Zhang, Xixiang
    Xia, Guangrui
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (10) : P302 - P309
  • [34] Local intermixing on Ge/Si heterostructures at low temperature growth
    Cheng, H. H.
    Huang, W. P.
    Mashanov, V. I.
    Sun, G.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)
  • [35] Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility
    Ueno, T
    Irisawa, T
    Shiraki, Y
    Uedono, A
    Tanigawa, S
    THIN SOLID FILMS, 2000, 369 (1-2) : 320 - 323
  • [36] Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields
    Univ of New South Wales, Sydney
    Phys B Condens Matter, 3-4 (388-392):
  • [37] Low-temperature mobility of holes in Si/SiGe p-channel heterostructures -: art. no. 195336
    Quang, DN
    Tuoc, VN
    Huan, TD
    Phong, PN
    PHYSICAL REVIEW B, 2004, 70 (19) : 1 - 10
  • [38] Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields
    Clark, RG
    Dunford, RB
    Fang, FF
    Stadnik, VA
    Mitchell, EE
    Newbury, R
    McKenzie, RH
    Starrett, RP
    Skougarevsky, AV
    Chu, JO
    Ismail, KE
    Meyerson, BS
    PHYSICA B, 1996, 216 (3-4): : 388 - 392
  • [39] A Si/SiGe MOSFET utilizing low-temperature wafer bonding
    Koliopoulou, S
    Dimitrakis, P
    Goustouridis, D
    Chatzandroulis, S
    Normand, P
    Tsoukalas, D
    Radamson, H
    MICROELECTRONIC ENGINEERING, 2005, 78-79 : 244 - 247
  • [40] Compliant effect of low-temperature Si buffer for SiGe growth
    Luo, YH
    Wan, J
    Forrest, RL
    Liu, JL
    Jin, G
    Goorsky, MS
    Wang, KL
    APPLIED PHYSICS LETTERS, 2001, 78 (04) : 454 - 456
12345