Origin of Green Coloration in AlN Crystals Grown on SiC Seeds

被引：0

作者：

Nagalyuk, S. S. ^{[1
]}

Mokhov, E. N. ^{[1
]}

Kazarova, O. P. ^{[1
]}

Ber, B. Y. ^{[1
]}

Anisimov, A. A. ^{[1
]}

Breev, I. D. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 06期

关键词：

AlN crystal; SiC seed; green or dark color; amorphous carbon; SUBLIMATION GROWTH;

D O I：

10.1134/S1063782621060099

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The origns leading to the appearance of a green color of AlN crystals grown by sublimation on SiC seeds are investigated. It was shown by the method of secondary ion mass spectroscopy that the color of crystals weakly depends on the content of silicon and carbon, and a green or dark color appears only with an increased content of carbon in comparison with silicon. The presence of a separate amorphous carbon phase in these crystals was established by the method of Raman light scattering. The separation of the carbon phase in the process of crystal growth makes it difficult to obtain high-quality AlN crystals, as well as AlN-SiC solid solutions. The influence of growth conditions on the optical properties of AlN crystals is analyzed.

引用

页码：546 / 550

页数：5

共 50 条

[41] GERMANIUM CRYSTALS GROWN FROM HOLLOW CYLINDRICAL SEEDS
FRANK, RC
THOMAS, JE
JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1689 - 1690
[42] MORPHOLOGICAL FEATURES OF BERLINITE CRYSTALS GROWN ON BASAL SEEDS
SHVANSKII, PP
LYUTIN, VI
KHADZHI, VE
URUSOV, VS
INORGANIC MATERIALS, 1990, 26 (05) : 886 - 888
[43] On the origin of the 265 nm absorption band in AlN bulk crystals
Collazo, Ramon
Xie, Jinqiao
Gaddy, Benjamin E.
Bryan, Zachary
Kirste, Ronny
Hoffmann, Marc
Dalmau, Rafael
Moody, Baxter
Kumagai, Yoshinao
Nagashima, Toru
Kubota, Yuki
Kinoshita, Toru
Koukitu, Akinori
Irving, Douglas L.
Sitar, Zlatko
APPLIED PHYSICS LETTERS, 2012, 100 (19)
[44] ORIGIN OF DISLOCATIONS IN SOLUTION-GROWN CRYSTALS
TRIGUNAYAT, GC
ZEITSCHRIFT FUR KRISTALLOGRAPHIE KRISTALLGEOMETRIE KRISTALLPHYSIK KRISTALLCHEMIE, 1965, 122 (5-6): : 463 - +
[45] Defect origin and development in sublimation grown SiC boules
Tuominen, M
Yakimova, R
Vehanen, A
Janzén, E
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 57 (03): : 228 - 233
[46] Defect origin and development in sublimation grown SiC boules
Tuominen, M.
Yakimova, R.
Vehanen, A.
Janzen, E.
Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1999, B57 (03): : 228 - 233
[47] Estimates of the Spontaneous Polarization and Permittivities of AlN, GaN, InN, and SiC Crystals
Davydov, S. Yu.
PHYSICS OF THE SOLID STATE, 2009, 51 (06) : 1231 - 1235
[48] Specific features of sublimation growth of bulk AlN crystals on SiC wafers
Mokhov, E.
Izmaylova, I.
Kazarova, O.
Wolfson, A.
Nagalyuk, S.
Litvin, D.
Vasiliev, A.
Helava, H.
Makarov, Yu
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 445 - 448
[49] Sublimation growth of c -plane AlN single crystals on SiC substrates
Sumathi, R. R.
Gille, P.
CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 47 (03) : 237 - 246
[50] Estimates of the spontaneous polarization and permittivities of AlN, GaN, InN, and SiC crystals
S. Yu. Davydov
Physics of the Solid State, 2009, 51 : 1231 - 1235

← 1 2 3 4 5 →