Origin of Green Coloration in AlN Crystals Grown on SiC Seeds

被引：0
|
作者：
Nagalyuk, S. S. [1 ]
Mokhov, E. N. [1 ]
Kazarova, O. P. [1 ]
Ber, B. Y. [1 ]
Anisimov, A. A. [1 ]
Breev, I. D. [1 ]
机构：
[1] Ioffe Inst, St Petersburg, Russia
来源：
SEMICONDUCTORS | 2021年 / 55卷 / 06期
关键词：
AlN crystal; SiC seed; green or dark color; amorphous carbon; SUBLIMATION GROWTH;
D O I：
10.1134/S1063782621060099
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The origns leading to the appearance of a green color of AlN crystals grown by sublimation on SiC seeds are investigated. It was shown by the method of secondary ion mass spectroscopy that the color of crystals weakly depends on the content of silicon and carbon, and a green or dark color appears only with an increased content of carbon in comparison with silicon. The presence of a separate amorphous carbon phase in these crystals was established by the method of Raman light scattering. The separation of the carbon phase in the process of crystal growth makes it difficult to obtain high-quality AlN crystals, as well as AlN-SiC solid solutions. The influence of growth conditions on the optical properties of AlN crystals is analyzed.
引用
收藏
页码：546 / 550
页数：5
相关论文
共 50 条
  • [21] Structural characterization of bulk AlN single crystals grown from self-seeding and seeding by SiC substrates
    Raghothamachar, Balaji
    Dalmau, Rafael
    Dudley, Michael
    Schlesser, Raoul
    Zhuang, Dejin
    Herro, Ziad
    Sitar, Zlatko
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1521 - 1524
  • [22] Electrolytic coloration of air-grown sodium fluoride crystals
    Gu, Hongen
    Han, Li
    Song, Cuiying
    Guo, Meili
    Wang, Na
    JOURNAL OF LUMINESCENCE, 2007, 124 (01) : 1 - 4
  • [23] MBE grown AlN films on SiC for piezoelectric MEMS sensors
    Doppalapudi, D
    Mlcak, R
    Chan, J
    Tuller, H
    Bhattacharya, A
    Moustakas, T
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 403 - 408
  • [24] SiC MISFETs with MBE-grown AlN gate dielectric
    Zetterling, CM
    Östling, M
    Yano, H
    Kimoto, T
    Matsunami, H
    Linthicum, K
    Davis, RF
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1315 - 1318
  • [25] Photoluminescence of GaN/AlN quantum dots grown on SiC substrates
    Fossard, F
    Gogneau, N
    Monroy, E
    Dang, LS
    Monnoye, S
    Mank, H
    Daudin, B
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1593 - 1596
  • [26] Raman characterization and stress analysis of AlN grown on SiC by sublimation
    Liu, L
    Liu, B
    Edgar, JH
    Rajasingam, S
    Kuball, M
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5183 - 5188
  • [27] Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals
    Hartmann, Carsten
    Wollweber, Juergen
    Dittmar, Andrea
    Irmscher, Klaus
    Kwasniewski, Albert
    Langhans, Frank
    Neugut, Tom
    Bickermann, Matthias
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [28] Study of the effects of an AlN interlayer on the transport properties of AlGaN/AlN/GaN heterostructures grown on SiC
    Elhamri, S.
    Mitchel, W. C.
    Mitchell, W. D.
    Landis, G. R.
    Berney, R.
    Saxler, A.
    APPLIED PHYSICS LETTERS, 2007, 90 (04)
  • [29] Crystal growth of mixed AlN-SiC bulk crystals
    Filip, Octavian
    Bickermann, Matthias
    Epelbaum, Boris M.
    Heimann, Paul
    Winnacker, Albrecht
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (18) : 2522 - 2526
  • [30] GROWING SINGLE-CRYSTALS OF SIC FROM SEEDS
    SHUSHLEBINA, NY
    SHASHKOV, YM
    BOGONOSOVA, EK
    GOLOBOKINA, EE
    INORGANIC MATERIALS, 1977, 13 (05) : 682 - 685
12345