Co-modeling and co-simulation of package and on-chip decoupling capacitor for resonant free power/ground network design

被引：0

作者：

Park, HJ ^{[1
]}

Kim, HS ^{[1
]}

Kam, DG ^{[1
]}

Kim, JH ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Terahertz Interconnect & Package Lab, Taejon 305701, South Korea

来源：

55TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, 2005 PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The co-modeling and co-simulation results about the package and on-chip power/ground network have been demonstrated. The inevitable parallel resonance peak, due to the inductive parasitic on the package and on-chip decoupling capacitor, was analyzed in frequency domain. Subsequently, the co-design procedure for the resonant free power/ground network was suggested and evaluated simply in frequency domain.

引用

页码：727 / 731

页数：5

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