Ordering InAs quantum dots formation on GaAs/InP by low pressure metal-organic chemical vapor deposition

被引：0

作者：

Yin, JZ ^{[1
]}

Wang, XQ ^{[1
]}

Du, GT ^{[1
]}

Yin, ZY ^{[1
]}

Li, MT ^{[1
]}

Li, ZT ^{[1
]}

Yang, SR ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 10期

关键词：

self-assembled quantum dots; tensile-strained GaAs layer; atomic force microscopy; photoluminescence spectrum; Raman spectrum;

D O I：

10.1143/JJAP.40.5889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the paper, a thin tensile GaAs interlayer was used to get regular arrangement of InAs quantum dots (QDs) on InP substrate by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The characterizations of the InAs QDs have been investigated by Photoluminescence (PL) spectrum, atomic force microscopy (AFM) image and Raman spectrum. The theoretical calculations have been performed. The conclusions coincide with our experiment results well.

引用

页码：5889 / 5892

页数：4

共 50 条

[31] Interdiffused InGaAsP quantum dots lasers on GaAs by metal organic chemical vapor deposition
Arif, Ronald A.
Kim, Nam-Heon
Mawst, Luke J.
Tansu, Nelson
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 65 - +
[32] Uniform InAs Quantum-dots on vicinal GaAs (100) substrates by pulsed atomic layer epitaxy via metal-organic chemical vapor deposition
Song, Minghui
Fang, Yanyan
Xiong, Hui
Wu, Zhihao
Dai, Jiangnan
Chen, Changqing
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2012, 6 (1-2): : 269 - 272
[33] Epitaxial Lateral Overgrowth of InP on Nanopatterned GaAs Substrates by Metal-Organic Chemical Vapor Deposition
Fan, Y. B.
Wang, J.
Li, J.
Yin, H. Y.
Hu, H. Y.
Yang, Z. Y.
Wei, X.
Huang, Y. Q.
Ren, X. M.
JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (09) : 5518 - 5524
[34] Low density self-assembled InAs/GaAs quantum dots grown by metal organic chemical vapour deposition
Li Lin
Liu Guo-Jun
Wang Xiao-Hua
Li Mei
Li Zhan-Guo
Wan Chun-Ming
CHINESE PHYSICS LETTERS, 2008, 25 (02) : 667 - 670
[35] Role of thin GaAs interlayer on InAs quantum dots grown on InGaAsP/InP (100) by metalorganic chemical vapor deposition
Barik, S
Tan, HH
Jagadish, C
Commad 04: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, 2005, : 331 - 334
[36] Coupling of InAs/InP quantum dots to the plasmon resonance of In nanoparticles grown by metal-organic vapor phase epitaxy
Yuan, Jiayue
Jin, C. Y.
Skacel, Matthias
Urbanczyk, Adam
Xia, Tian
van Veldhoven, P. J.
Notzel, Richard
APPLIED PHYSICS LETTERS, 2013, 102 (19)
[37] 1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition
Kushibe, M.
Hashimoto, R.
Ezaki, M.
Managaki, N.
Hatakoshi, G.
Nishioka, M.
Arakawa, Y.
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 1266 - +
[38] InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition
Li, Senlin
Chen, Qingqing
Sun, Shichuang
Li, Yulian
Zhu, Qiangzhong
Li, Juntao
Wang, Xuehua
Han, Junbo
Zhang, Junpei
Chen, Changqing
Fang, Yanyan
NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 5
[39] InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition
Senlin Li
Qingqing Chen
Shichuang Sun
Yulian Li
Qiangzhong Zhu
Juntao Li
Xuehua Wang
Junbo Han
Junpei Zhang
Changqing Chen
Yanyan Fang
Nanoscale Research Letters, 8
[40] Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique
Dhawan, Tanuj
Tyagi, Renu
Bag, Rajesh Kumar
Singh, Mahavir
Mohan, Premila
Haldar, T.
Murlidharan, R.
Tandon, R. P.
NANOSCALE RESEARCH LETTERS, 2010, 5 (01): : 31 - 37

← 1 2 3 4 5 →