Ordering InAs quantum dots formation on GaAs/InP by low pressure metal-organic chemical vapor deposition

被引：0
|
作者：
Yin, JZ [1 ]
Wang, XQ [1 ]
Du, GT [1 ]
Yin, ZY [1 ]
Li, MT [1 ]
Li, ZT [1 ]
Yang, SR [1 ]
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 10期
关键词：
self-assembled quantum dots; tensile-strained GaAs layer; atomic force microscopy; photoluminescence spectrum; Raman spectrum;
D O I：
10.1143/JJAP.40.5889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the paper, a thin tensile GaAs interlayer was used to get regular arrangement of InAs quantum dots (QDs) on InP substrate by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The characterizations of the InAs QDs have been investigated by Photoluminescence (PL) spectrum, atomic force microscopy (AFM) image and Raman spectrum. The theoretical calculations have been performed. The conclusions coincide with our experiment results well.
引用
收藏
页码：5889 / 5892
页数：4
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