InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition

被引：0
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作者：
Senlin Li
Qingqing Chen
Shichuang Sun
Yulian Li
Qiangzhong Zhu
Juntao Li
Xuehua Wang
Junbo Han
Junpei Zhang
Changqing Chen
Yanyan Fang
机构：
[1] Huazhong University of Science and Technology,Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information
[2] Sun Yat-Sen University,State Key Laboratory of Optical Materials and Technologies, School of Physics and Engineering
[3] Huazhong University of Science and Technology,Wuhan National High Magnetic Field Center
来源：
Nanoscale Research Letters | / 8卷
关键词：
InAs quantum dots; V/III ratio; MOCVD;
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摘要：
The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 105 to 1010 cm−2 by simply manipulating V/III ratio via metal-organic chemical vapor deposition. These results are mainly ascribed to the changes of coverage and In adatom migration length due to the increasing V/III ratio.
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