InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition

被引：0

作者：

Senlin Li

Qingqing Chen

Shichuang Sun

Yulian Li

Qiangzhong Zhu

Juntao Li

Xuehua Wang

Junbo Han

Junpei Zhang

Changqing Chen

Yanyan Fang

机构：

[1] Huazhong University of Science and Technology,Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information

[2] Sun Yat-Sen University,State Key Laboratory of Optical Materials and Technologies, School of Physics and Engineering

[3] Huazhong University of Science and Technology,Wuhan National High Magnetic Field Center

来源：

Nanoscale Research Letters | / 8卷

关键词：

InAs quantum dots; V/III ratio; MOCVD;

D O I：

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中图分类号：

学科分类号：

摘要：

The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 105 to 1010 cm−2 by simply manipulating V/III ratio via metal-organic chemical vapor deposition. These results are mainly ascribed to the changes of coverage and In adatom migration length due to the increasing V/III ratio.

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