A novel high-conductivity IGBT (HiGT) with a short circuit capability

被引：33
|
作者：
Mori, M [1 ]
Uchino, Y [1 ]
Sakano, J [1 ]
Kobayashi, H [1 ]
机构：
[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan
来源：
ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年
关键词：
D O I：
10.1109/ISPSD.1998.702737
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a new high-conductivity IGBT (HiGT) with a DMOS structure and an n-type hole-barrier layer surrounding a p-layer. The hole-barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n(-)-layer. The HiGT provides a collector-emitter saturation voltage (V-CE(sat)) of about 1 V lower than that of the conventional IGBT, while it maintains a high blocking voltage of 3.3 kV by controlling the carrier concentration of the hole-barrier layer. The HiGT has tough short circuit capability of more than 10 mu s at 125 degrees C with a saturation current similar to that of the conventional IGBT.
引用
收藏
页码：429 / 432
页数：4
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