A novel high-conductivity IGBT (HiGT) with a short circuit capability

被引：33

作者：

Mori, M ^{[1
]}

Uchino, Y ^{[1
]}

Sakano, J ^{[1
]}

Kobayashi, H ^{[1
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new high-conductivity IGBT (HiGT) with a DMOS structure and an n-type hole-barrier layer surrounding a p-layer. The hole-barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n(-)-layer. The HiGT provides a collector-emitter saturation voltage (V-CE(sat)) of about 1 V lower than that of the conventional IGBT, while it maintains a high blocking voltage of 3.3 kV by controlling the carrier concentration of the hole-barrier layer. The HiGT has tough short circuit capability of more than 10 mu s at 125 degrees C with a saturation current similar to that of the conventional IGBT.

引用

页码：429 / 432

页数：4

共 50 条

[21] HIGH-CONDUCTIVITY, SOLID POLYMERIC ELECTROLYTES
MENDOLIA, MS
FARRINGTON, GC
MATERIALS CHEMISTRY: AN EMERGING DISCIPLINE, 1995, 245 : 107 - 130
[22] ELECTROLUMINESCENCE IN POLYMERS WITH ABNORMALLY HIGH-CONDUCTIVITY
VALEEVA, IL
LACHINOV, AN
SYNTHETIC METALS, 1993, 57 (01) : 4151 - 4156
[23] A high-conductivity oxide fuel concept
McDeavitt, Sean M.
Ragusa, Jean
Revankar, Shripad T.
Solomon, Alvin A.
Malone, James
NUCLEAR ENGINEERING INTERNATIONAL, 2011, 56 (682): : 40 - 42
[24] ON DYNAMO ACTION IN THE HIGH-CONDUCTIVITY LIMIT
RADLER, KH
GEOPHYSICAL AND ASTROPHYSICAL FLUID DYNAMICS, 1982, 20 (3-4): : 191 - 211
[25] MECHANISMS LIMITING THE DC CONDUCTIVITY OF HIGH-CONDUCTIVITY POLYACETYLENE
SCHIMMEL, T
SCHWOERER, M
NAARMANN, H
SYNTHETIC METALS, 1990, 37 (1-3) : 1 - 6
[26] Boundary layer on a high-conductivity domain
Sanchez, D
COMMUNICATIONS ON PURE AND APPLIED ANALYSIS, 2002, 1 (04) : 547 - 564
[27] IMPURITY EFFECTS IN HIGH-CONDUCTIVITY COPPER
HSU, YT
OREILLY, B
JOURNAL OF METALS, 1977, 29 (12): : 21 - 24
[28] DEOXIDATION OF COPPER FOR HIGH-CONDUCTIVITY CASTINGS
DION, JL
COUTURE, A
EDWARDS, JO
INTERNATIONAL CAST METALS JOURNAL, 1979, 4 (02): : 7 - 13
[29] Constructal Design of High-Conductivity Inserts
Souza, J. A.
Ordonez, J. C.
CONSTRUCTAL LAW AND THE UNIFYING PRINCIPLE OF DESIGN, 2013, : 91 - 111
[30] A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability
Zhang, Long
Ma, Jie
Luo, Min
Cui, Wangming
Liu, Peigang
Liu, Siyang
Wei, Jiaxing
Li, Sheng
Sun, Weifeng
He, Nailong
Zhang, Sen
Bai, Song
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (07) : 4042 - 4045

← 1 2 3 4 5 →