A novel high-conductivity IGBT (HiGT) with a short circuit capability

This paper presents a new high-conductivity IGBT (HiGT) with a DMOS structure and an n-type hole-barrier layer surrounding a p-layer. The hole-barrier layer acts as a barrier to prevent the holes from flowing into the p-layer and stores them in the n(-)-layer. The HiGT provides a collector-emitter saturation voltage (V-CE(sat)) of about 1 V lower than that of the conventional IGBT, while it maintains a high blocking voltage of 3.3 kV by controlling the carrier concentration of the hole-barrier layer. The HiGT has tough short circuit capability of more than 10 mu s at 125 degrees C with a saturation current similar to that of the conventional IGBT.