1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225 degrees C, with leakage current at 1700V at 225 degrees C of less than 5 mu A with V-GS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25 degrees C to 200 degrees C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.