1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

被引：5

作者：

Hull, B. A. ^{[1
]}

Ryu, S. -H. ^{[1
]}

Zhang, J. ^{[1
]}

Jonas, C. ^{[1
]}

O'Loughlin, M. ^{[1
]}

Callanan, R. ^{[1
]}

Palmour, J. ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

DMOSFET; SiC; Power Semiconductor Switch; High Temperature Switch;

D O I：

10.4028/www.scientific.net/MSF.679-680.633

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225 degrees C, with leakage current at 1700V at 225 degrees C of less than 5 mu A with V-GS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25 degrees C to 200 degrees C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.

引用

页码：633 / 636

页数：4

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