1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

被引：5
|
作者：
Hull, B. A. [1 ]
Ryu, S. -H. [1 ]
Zhang, J. [1 ]
Jonas, C. [1 ]
O'Loughlin, M. [1 ]
Callanan, R. [1 ]
Palmour, J. [1 ]
机构：
[1] Cree Inc, Durham, NC 27703 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷
关键词：
DMOSFET; SiC; Power Semiconductor Switch; High Temperature Switch;
D O I：
10.4028/www.scientific.net/MSF.679-680.633
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225 degrees C, with leakage current at 1700V at 225 degrees C of less than 5 mu A with V-GS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25 degrees C to 200 degrees C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.
引用
收藏
页码：633 / 636
页数：4
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