A 39GHz Bandwidth, 2.5GS/s 7-bit SAR ADC in 22nm FDSOI CMOS

被引:1
|
作者
Checca, E. [1 ]
Voinigescu, S. P. [1 ]
机构
[1] Univ Toronto, ECE Dept, Toronto, ON, Canada
来源
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2021年
关键词
back-gate biasing; C-DAC; FDSOI CMOS; phase generator; SAR ADC;
D O I
10.1109/IMS19712.2021.9575004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A synchronous SAR ADC lane architecture using time-interleaved comparators to drive half of the shift-register cells on alternate phases of the clock is proposed to relax the delay constraints around the SAR loop and thus maximize the sampling rate. The set-and-down capacitive DAC further increases the sampling- rate while reducing front-end loading on the input buffer stage to achieve a record analog input signal bandwidth of 39 GHz. The 7-bit SAR ADC, manufactured in 22nm FDSOI CMOS, also includes a 12.5% duty cycle, 8-phase generator featuring CMOS logic with inductive peaking which operates with input clock frequencies up to 40 GHz. The SAR ADC lane occupies 75 mu mx10 mu m and consumes 17.5 mW at 2.5 GS/s, and 19.4 mW at 3 GS/s. It achieves an ENOB of 5.18 and 4.75 at 2.5 GS/s and 3 GS/s, respectively, with SFDR greater than 34 dB over the 39 GHz input bandwidth, limited by the linearity of the input buffer.
引用
收藏
页码:760 / 763
页数:4
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