Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μM

被引：4
|
作者：
Ramirez, J. M. [1 ]
Jambois, O. [1 ]
Berencen, Y. [1 ]
Navarro-Urrios, D. [1 ]
Anopchenko, A. [2 ]
Marconi, A. [2 ]
Prtljaga, N. [2 ]
Daldosso, N. [4 ]
Pavesi, L. [2 ]
Colonna, J. -P. [3 ]
Fedeli, J. -M. [3 ]
Garrido, B. [1 ]
机构：
[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain
[2] Univ Trento, Dept Phys, Nanosci Lab, I-38123 Trento, Italy
[3] CEA, Leti, F-38054 Grenoble 9, France
[4] Univ Verona, Dipartimento Informat, I-37134 Verona, Italy
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 10期
关键词：
Silicon nanocrystals (Si-ncs); Erbium; Pulsed voltage; Electroluminescence; ERBIUM-DOPED SILICON; ENERGY-TRANSFER; POROUS SILICON; OPTICAL GAIN; QUANTUM DOTS; ELECTROLUMINESCENCE; NANOCRYSTALS; LUMINESCENCE; EFFICIENCY; ER;
D O I：
10.1016/j.mseb.2011.12.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 degrees C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er3+ ions have been extracted. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：734 / 738
页数：5
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