Si/S1-xGex/Si-based quantum wells infrared photodetector operating at 1.55 μm

A quantum well infrared photodetector consisting of self-assembled type II SiGe/Si based quantum wells operating around 1.55 mu m at room temperature has been investigated. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack results in a 'W' like profiles of the conduction and valence bands strain-compensated in the two low absorption windows of silica fibers infrared photodetectors have been proposed. Such computations have been used for the study of the p-i-n infrared photodetectors operating, around (1.3-1.55 mu m) at room temperature. The quantum transport properties of electrons and holes were approved with Schrodinger and kinetic equations resolved self-consistently with the Poisson equation. The theoretical performances of the photodetector were carried out such as the dark current mechanisms, the temperature dependence of normalized dark current and the zero-bias resistance area product (R(0)A). (C) 2012 Elsevier Ltd. All rights reserved.