Calibration of a neutron detector based on single event upset of SRAM memories

被引:8
|
作者
Domingo, C. [1 ]
Gomez, F. [2 ]
Sanchez-Doblado, F. [3 ,4 ]
Hartmann, G. H. [5 ]
Amgarou, K. [1 ]
Garcia-Fuste, M. J. [1 ]
Romero, M. T. [3 ]
Boettger, R. [6 ]
Nolte, R. [6 ]
Wissmann, F. [6 ]
Zimbal, A. [6 ]
Schuhmacher, H. [6 ]
机构
[1] Univ Autonoma Barcelona, Dept Fis, E-08193 Bellaterra, Spain
[2] Univ Santiago, Dpto Particulas, Santiago De Compostela 15782, Spain
[3] Univ Seville, Dpto Fisiol Med & Biofis, E-41009 Seville, Spain
[4] Hosp Univ Virgen Macarena, Serv Radiofis, Seville 41009, Spain
[5] DKFZ E0400, D-69120 Heidelberg, Germany
[6] PTB, D-38116 Braunschweig, Germany
关键词
Neutron detector; Fluence response; Ambient dose equivalent response; Calibration; MONTE-CARLO; RADIOTHERAPY; DENSITY;
D O I
10.1016/j.radmeas.2010.08.021
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
One of the challenges of measuring neutron fluences around medical linacs is the fact that the scattered photon fluence is important and higher than the surrounding neutron leakage fluence. Additionally most electron accelerators are pulsed, with repetition rates of the order of hundreds of Hertz, while the pulse duration is in the microsecond range. For this reason, neutron fluence around RT linacs is usually measured through passive methods, with the inconvenience of their time consuming analysis. A new neutron detector, based on the relation between Single Event Upsets (SEU) in digital SRAM memories and the existing thermal neutron fluence, has been developed. This work reports the calibration results of prototypes of this detector, obtained from exposures to the Physikalisch-Technische Bundesanstalt in Braunschweig (PTB) moderated Cf-252 source, to PTB quasi-monoenergetic neutron beams of 0.565 MeV, 1.2 MeV, 5 MeV, 8 MeV and 14.8 MeV, and to the GKSS thermal neutron beam. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1513 / 1517
页数:5
相关论文
共 50 条
  • [41] A novel layout for single event upset mitigation in advanced CMOS SRAM cells
    JunRui Qin
    DaWei Li
    ShuMing Chen
    Science China Technological Sciences, 2013, 56 : 143 - 147
  • [42] Supply Voltage Dependence of Single Event Upset Sensitivity in Diverse SRAM Devices
    Zhang, Zhangang
    Liu, Jie
    Sun, Youmei
    Hou, Mingdong
    Tong, Teng
    Gu, Song
    Liu, Tianqi
    Geng, Chao
    Xi, Kai
    Yao, Huijun
    Luo, Jie
    Duan, Jinglai
    Mo, Dan
    Su, Hong
    Zhang, Zhangang
    Lei, Zhifeng
    En, Yunfei
    Huang, Yun
    PROCEEDINGS OF 2014 10TH INTERNATIONAL CONFERENCE ON RELIABILITY, MAINTAINABILITY AND SAFETY (ICRMS), VOLS I AND II, 2014, : 114 - 119
  • [43] Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM
    TANG Du
    LI YongHong
    ZHANG GuoHe
    HE ChaoHui
    FAN YunYun
    Science China(Technological Sciences), 2013, 56 (03) : 780 - 785
  • [44] A Self-Checking Scheme to Mitigate Single Event Upset Effects in SRAM-Based FPAAs
    Balen, Tiago R.
    Leite, Franco
    Kastensmidt, Fernanda Lima
    Lubaszewski, Marcelo
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) : 1950 - 1957
  • [45] Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM
    Tang Du
    Li YongHong
    Zhang GuoHe
    He ChaoHui
    Fan YunYun
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2013, 56 (03) : 780 - 785
  • [46] A novel layout for single event upset mitigation in advanced CMOS SRAM cells
    Qin JunRui
    Li DaWei
    Chen ShuMing
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2013, 56 (01) : 143 - 147
  • [47] Analyzing the Single Event Upset Vulnerability of Binarized Neural Networks on SRAM FPGAs
    Souvatzoglou, Ioanna
    Papadimitriou, Athanasios
    Sari, Aitzan
    Vlagkoulis, Vasileios
    Psarakis, Mihalis
    34TH IEEE INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT TOLERANCE IN VLSI AND NANOTECHNOLOGY SYSTEMS (DFT 2021), 2021,
  • [48] Impact of temperature on single event upset measurement by heavy ions in SRAM devices
    刘天奇
    耿超
    张战刚
    赵发展
    古松
    童腾
    习凯
    刘刚
    韩郑生
    侯明东
    刘杰
    Journal of Semiconductors, 2014, 35 (08) : 102 - 107
  • [49] Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM
    Du Tang
    YongHong Li
    GuoHe Zhang
    ChaoHui He
    YunYun Fan
    Science China Technological Sciences, 2013, 56 : 780 - 785
  • [50] Single Event Upset and Radiation Hardening of the Complementary FET (CFET) based 6T-SRAM
    Zhang, Zhengxin
    Chen, Wangyong
    Lin, Jianwen
    Cai, Linlin
    2024 INTERNATIONAL SYMPOSIUM OF ELECTRONICS DESIGN AUTOMATION, ISEDA 2024, 2024, : 782 - 782