Calibration of a neutron detector based on single event upset of SRAM memories

被引：8
|
作者：
Domingo, C. [1 ]
Gomez, F. [2 ]
Sanchez-Doblado, F. [3 ,4 ]
Hartmann, G. H. [5 ]
Amgarou, K. [1 ]
Garcia-Fuste, M. J. [1 ]
Romero, M. T. [3 ]
Boettger, R. [6 ]
Nolte, R. [6 ]
Wissmann, F. [6 ]
Zimbal, A. [6 ]
Schuhmacher, H. [6 ]
机构：
[1] Univ Autonoma Barcelona, Dept Fis, E-08193 Bellaterra, Spain
[2] Univ Santiago, Dpto Particulas, Santiago De Compostela 15782, Spain
[3] Univ Seville, Dpto Fisiol Med & Biofis, E-41009 Seville, Spain
[4] Hosp Univ Virgen Macarena, Serv Radiofis, Seville 41009, Spain
[5] DKFZ E0400, D-69120 Heidelberg, Germany
[6] PTB, D-38116 Braunschweig, Germany
来源：
RADIATION MEASUREMENTS | 2010年 / 45卷 / 10期
关键词：
Neutron detector; Fluence response; Ambient dose equivalent response; Calibration; MONTE-CARLO; RADIOTHERAPY; DENSITY;
D O I：
10.1016/j.radmeas.2010.08.021
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
One of the challenges of measuring neutron fluences around medical linacs is the fact that the scattered photon fluence is important and higher than the surrounding neutron leakage fluence. Additionally most electron accelerators are pulsed, with repetition rates of the order of hundreds of Hertz, while the pulse duration is in the microsecond range. For this reason, neutron fluence around RT linacs is usually measured through passive methods, with the inconvenience of their time consuming analysis. A new neutron detector, based on the relation between Single Event Upsets (SEU) in digital SRAM memories and the existing thermal neutron fluence, has been developed. This work reports the calibration results of prototypes of this detector, obtained from exposures to the Physikalisch-Technische Bundesanstalt in Braunschweig (PTB) moderated Cf-252 source, to PTB quasi-monoenergetic neutron beams of 0.565 MeV, 1.2 MeV, 5 MeV, 8 MeV and 14.8 MeV, and to the GKSS thermal neutron beam. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1513 / 1517
页数：5
相关论文
共 50 条
  • [21] Impact of technology trends on single event upset resistance of CMOS SRAM
    Zhang, Ke-Ying
    Guo, Hong-Xia
    Luo, Yin-Hong
    He, Bao-Ping
    Yao, Zhi-Bin
    Zhang, Feng-Qi
    Wang, Yuan-Ming
    Yuanzineng Kexue Jishu/Atomic Energy Science and Technology, 2010, 44 (02): : 215 - 219
  • [22] Research on Single Event Upset Cross-section of DICE SRAM
    Zhu Ming
    Zhu HengJing
    Hang He
    Gu Hantian
    Zhang Wei
    Yu Qingkui
    Sun Yi
    Tang Min
    2017 PROGNOSTICS AND SYSTEM HEALTH MANAGEMENT CONFERENCE (PHM-HARBIN), 2017, : 683 - 686
  • [23] Single event upset detection and hardening schemes for CNTFET SRAM - a review
    Rajalakshmi, T.R.
    Sudhakar, R.
    Journal of Engineering Science and Technology Review, 2015, 8 (05) : 49 - 56
  • [24] Modification of single event upset cross section of an SRAM at high frequencies
    Buchner, S
    Campbell, AB
    McMorrow, D
    Melinger, J
    Masti, M
    Chen, YJ
    RADECS 95 - THIRD EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1996, : 326 - 332
  • [25] Impact of NBTI Aging on the Single-Event Upset of SRAM Cells
    Bagatin, Marta
    Gerardin, Simone
    Paccagnella, Alessandro
    Faccio, Federico
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (06) : 3245 - 3250
  • [26] Study on method for pulsed laser simulating SRAM single event upset
    Shangguan, S.-P., 1600, Atomic Energy Press (47):
  • [27] Impact of Single Event Upset on Voltage and Current Behaviors of CNTFET SRAM and a Comparison with CMOS SRAM
    Rajalakshmi, T. R.
    Sudhakar, R.
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2017, 26 (02)
  • [28] Single Event Upset in SRAM-based Field Programmable Analog Arrays: Effects and mitigation
    Balen, Tiago R.
    Kastensmidt, Fernanda Lima
    Lubaszewski, Marcelo S.
    Renovell, M.
    IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, PROCEEDINGS: EMERGING VLSI TECHNOLOGIES AND ARCHITECTURES, 2007, : 192 - +
  • [29] Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection
    Black, J. D.
    Ball, D. R., II
    Robinson, W. H.
    Fleetwood, D. M.
    Schrimpf, R. D.
    Reed, R. A.
    Black, D. A.
    Warren, K. M.
    Tipton, A. D.
    Dodd, P. E.
    Haddad, N. F.
    Xapsos, M. A.
    Kim, H. S.
    Friendlich, M.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) : 2943 - 2947
  • [30] Observation of changes in the single event upset rate in 4MB SRAM due to intervening materials in a neutron environment
    Wilkins, R
    Huff, H
    Badhwar, GD
    Moore, J
    Zhou, J
    Singleterry, RC
    Wender, SA
    Fogarty, TN
    2001 6TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2002, : 469 - 473
12345