Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz

被引：16

作者：

Spiessberger, Stefan ^{[1
]}

Schiemangk, Max ^{[2
]}

Sahm, Alexander ^{[1
]}

Wicht, Andreas ^{[1
]}

Wenzel, Hans ^{[1
]}

Peters, Achim ^{[2
]}

Erbert, Goetz ^{[1
]}

Traenkle, Guenther ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

[2] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 08期

关键词：

DFB LASERS; NOISE; AMPLIFIER; POWER; DIODES; NM;

D O I：

10.1364/OE.19.007077

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a compact, narrow-linewidth, high-power, micro-integrated semiconductor-based master oscillator power amplifier laser module which is implemented on a footprint of 50 x 10 mm(2). A micro-isolator between the oscillator and the amplifier suppresses optical feedback. The oscillator is a distributed Bragg reflector laser optimized for narrow-linewidth operation and the amplifier consists of a ridge waveguide entry and a tapered amplifier section. The module features stable single-mode operation with a FWHM linewidth of only 100 kHz and an intrinsic linewidth as small as 3.6 kHz for an output power beyond 1 W. (C) 2011 Optical Society of America

引用

页码：7077 / 7083

页数：7

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