A 10-kHz intrinsic linewidth coupled extended-cavity DBR laser monolithically integrated on an InP platform

被引:9
|
作者
Kumar, Rakesh Ranjan [1 ]
Hansel, Andreas [1 ]
Brusatori, Monica Far [1 ]
Nielsen, Lars [1 ]
Augustin, Luc M. [2 ]
Volet, Nicolas [1 ]
Heck, Martijn J. R. [1 ,3 ]
机构
[1] Aarhus Univ, Dept Elect & Comp Engn, Finlandsgade 22, DK-8200 Aarhus N, Denmark
[2] Eindhoven Univ Technol, Smart Photon BV, NL-5604 EA Eindhoven, Netherlands
[3] Eindhoven Univ Technol, Eindhoven Hendrik Casimir Inst, NL-5600 MB Eindhoven, Netherlands
关键词
SEMICONDUCTOR-LASER;
D O I
10.1364/OL.454478
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report a monolithically integrated coupled extended-cavity distributed Bragg reflector laser with, to our knowledge, the lowest reported intrinsic linewidth of similar to 10 kHz, which is extracted from a corresponding frequency-noise level of similar to 3200 Hz(2)/Hz, realized on an InP generic foundry platform. Using the delayed self-heterodyne method, the experimentally measured linewidth was 45 kHz. The laser has an on-chip optical output power of 18 mW around 1550 nm at an injection current of 95 mA. The laser operates in a single-mode regime with a side-mode suppression ratio of 54 dB. Our monolithic approach paves the way toward further integration, such as integrated quantum key distribution transceivers. (C) 2022 Optica Publishing Group
引用
收藏
页码:2346 / 2349
页数:4
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