Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz

被引：16
|
作者：
Spiessberger, Stefan [1 ]
Schiemangk, Max [2 ]
Sahm, Alexander [1 ]
Wicht, Andreas [1 ]
Wenzel, Hans [1 ]
Peters, Achim [2 ]
Erbert, Goetz [1 ]
Traenkle, Guenther [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany
[2] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
来源：
OPTICS EXPRESS | 2011年 / 19卷 / 08期
关键词：
DFB LASERS; NOISE; AMPLIFIER; POWER; DIODES; NM;
D O I：
10.1364/OE.19.007077
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate a compact, narrow-linewidth, high-power, micro-integrated semiconductor-based master oscillator power amplifier laser module which is implemented on a footprint of 50 x 10 mm(2). A micro-isolator between the oscillator and the amplifier suppresses optical feedback. The oscillator is a distributed Bragg reflector laser optimized for narrow-linewidth operation and the amplifier consists of a ridge waveguide entry and a tapered amplifier section. The module features stable single-mode operation with a FWHM linewidth of only 100 kHz and an intrinsic linewidth as small as 3.6 kHz for an output power beyond 1 W. (C) 2011 Optical Society of America
引用
收藏
页码：7077 / 7083
页数：7
相关论文
共 50 条
  • [31] 0.27 Terawatt laser system at 1 kHz
    Backus, S
    Durfee, CG
    Kapteyn, HC
    Murnane, MM
    APPLICATIONS OF HIGH-FIELD AND SHORT WAVELENGTH SOURCES, 1998, : 17 - 21
  • [32] 0.28 TW laser system at 1 kHz, scaleable to 2 TW at 1 kHz
    Backus, S
    Durfee, CG
    Murnane, MM
    Kapteyn, HC
    ULTRAFAST PHENOMENA XI, 1998, 63 : 41 - 43
  • [33] Monolithically Integrated Extended Cavity Diode Laser with 32 kHz 3 dB Linewidth Emitting at 1064 nm
    Wenzel, Sten
    Brox, Olaf
    Della Casa, Pietro
    Wenzel, Hans
    Arar, Bassem
    Kreutzmann, Sabrina
    Weyers, Markus
    Knigge, Andrea
    Wicht, Andreas
    Traenkle, Guenther
    LASER & PHOTONICS REVIEWS, 2022, 16 (12)
  • [34] Single-Frequency kHz-Linewidth 2-μm GaSb-Based Semiconductor Disk Lasers With Multiple-Watt Output Power
    Kaspar, S.
    Rattunde, M.
    Toepper, T.
    Manz, C.
    Koehler, K.
    Wagner, J.
    2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
  • [35] Effect of Linewidth Enhancement Factor in Semiconductor Laser on Fiber Dispersion Transmission System
    Liu, Zhe-yu
    Zhao, Tong-gang
    2015 FIFTH INTERNATIONAL CONFERENCE ON INSTRUMENTATION AND MEASUREMENT, COMPUTER, COMMUNICATION AND CONTROL (IMCCC), 2015, : 701 - 705
  • [36] 1 Watt from 1.56 μm Single Frequency Semiconductor Disk Laser
    Rantamaki, Antti
    Rautiainen, Jussi
    Sirbu, Alexei
    Mereuta, Alexandru
    Kapon, Eli
    Okhotnikov, Oleg G.
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE AND INTERNATIONAL QUANTUM ELECTRONICS CONFERENCE (CLEO EUROPE/IQEC), 2013,
  • [37] Effect of Linewidth Enhancement Factor in Semiconductor Laser on Fiber Dispersion Transmission System
    Liu, Zhe-yu
    Zhao, Tong-gang
    Bai, Zhi-hong
    PROCEEDINGS OF THE 6TH INTERNATIONAL ASIA CONFERENCE ON INDUSTRIAL ENGINEERING AND MANAGEMENT INNOVATION, VOL 2: INNOVATION AND PRACTICE OF INDUSTRIAL ENGINEERING AND MANAGMENT, 2016, : 157 - 166
  • [38] 100 kHz Narrow-Linewidth Burst-Mode MOPA Laser System With Uniform Envelope
    Yu, Xin
    Zhang, Shanchun
    Peng, Jiangbo
    Cao, Zhen
    Gao, Long
    Liu, Wenbei
    FRONTIERS IN PHYSICS, 2022, 10
  • [39] 0.2-TW laser system at 1 kHz
    Univ of Michigan, Ann Arbor, United States
    Opt Lett, 16 (1256-1258):
  • [40] 0.2-TW laser system at 1 kHz
    Backus, S
    Durfee, CG
    Mourou, G
    Kapteyn, HC
    Murnane, MM
    OPTICS LETTERS, 1997, 22 (16) : 1256 - 1258
12345