Growth of GaAs and InGaAs nanowires by utilizing selective area MOVPE

被引：0
|
作者：
Noborisaka, J [1 ]
Motohisa, J [1 ]
Takeda, J [1 ]
Inari, M [1 ]
Miyoshi, Y [1 ]
Ooike, N [1 ]
Fukui, T [1 ]
机构：
[1] Hokkaido Univ, Res ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608626, Japan
来源：
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the fabrication of GaAs and InGaAs hexagonal nanowires surrounded by {110} vertical facets on GaAs (111)B and InP (111)B substrates using selective area (SA) MOVPE growth. The substrate for SA-growth was partially covered with thin SiO2 and circular mask opening with diameter d(0) of 50-200 nm was defined. After SA-MOVPE, GaAs or InGaAs nanowires with the typical diameter d ranging from 50 nm to 200 nm and height 2 mu m to 9 mu m was formed vertically on the substrates, depending on the growth conditions and the pattern geometry. Possible growth mechanism is also discussed.
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页码：647 / 650
页数：4
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