Growth of InGaAs/GaAs on offcut substrates by MOVPE: Influence on macrosteps and dislocations formation

被引：0
|
作者：
Frigeri, C
Brinciotti, A
Ritchie, DM
机构：
[1] CNR, Inst Maspec, I-43100 Parma, Italy
[2] Alcatel Italia, I-20059 Vimercate, Italy
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1998年 / 33卷 / 03期
关键词：
D O I：
10.1002/(SICI)1521-4079(1998)33:3<375::AID-CRAT375>3.0.CO;2-R
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A study of the relationship between the macrosteps caused by the substrate misorientation and dislocation nucleation in MOVPE-grown InGaAs/GaAs is presented. The macrosteps could favour strain relaxation and the decrease of the critical thickness, also by generation of misfit dislocations in the 1/2[110]{011} glide system, as they can provide sites for stress accumulation above the average value far from the macrosteps. This adds up to the enhanced homogeneous dislocation nucleation associated with the offcut angle. The use of offcut substrates thus produces both compositional inhomogeneities and an increase of the ol el all dislocation density.
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收藏
页码：375 / 382
页数：8
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