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- [2] Influence of compositional macrosteps on the reduction of the critical thickness by generation of ⟨010⟩ misfit dislocations in InGaAs/GaAs quantum wells MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 116 - 119
- [4] Formation of dislocations in InGaAs/GaAs heterostructures PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 171 (01): : 275 - 282
- [6] Misfit dislocations and surface morphology of InGaAs/GaAs heterostructures grown by MOVPE PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 2009, 6 (08): : 1918 - +
- [7] Real-Time Observation Of Crystallographic Tilting InGaAs Layers On GaAs Offcut Substrates 9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-9), 2013, 1556 : 14 - 17
- [9] InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates 2005 2nd IEEE International Conference on Group IV Photonics, 2005, : 207 - 209
- [10] The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE INTERNATIONAL CONFERENCE PHYSICA.SPB/2019, 2019, 1400