Cavityless wafer level packaging of SAW devices

被引:8
|
作者
Bhattacharjee, K. [1 ]
Shvetsov, A. [2 ]
Zhgoon, S. [2 ]
机构
[1] RF Micro Devices, Greensboro, NC 27409 USA
[2] Moscow Power Engn Inst, Dept Radio Engn Fundamentals, Moscow, Russia
关键词
waveguiding layer acoustic wave; isolated layer acoustic wave; styling; cavityless WLP; SAW device; SURFACE; WAVES;
D O I
10.1109/ULTSYM.2007.474
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
Original implementations of the solution to cavityless WLP by means of isolation of waves are discussed. Variants of waveguiding layer acoustic wave (WLAW) (similar to boundary and interface waves) and isolated layer acoustic wave (ILAW) together with Bragg mirror-like additional acoustical isolation are compared in modeling and experimentally. The structures include metal electrode patterns and subsequent layers. The first among these layers is a dielectric layer, usually SiO2 (or Pyrex) that possesses temperature compensating properties, while the outer layers are formed with either metals or dielectrics. In order for the wave to be confined into the SiO2 layer the stack of the outer layers may be formed in different ways. For implementation of the WLAW concept, the main feature of subsequent layers is the increased acoustical velocity in comparison to the SiO2 layer. Thus the wave attenuates exponentially in the structure on both sides of the SiO2 waveguiding core. The ILAW concept is based on the application of high acoustical impedance materials providing abrupt change in boundary conditions between the layers. Further improvement of acoustical isolation in this approach is effectuated by means of alternating several layers with low and high acoustical impedance.
引用
收藏
页码:1886 / +
页数:2
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