Spatial characterization of doped SiC wafers

被引：1
|
作者：
Burton, JC [1 ]
Sun, L [1 ]
Pophristic, M [1 ]
Li, J [1 ]
Long, FH [1 ]
Feng, ZC [1 ]
Ferguson, I [1 ]
机构：
[1] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA
来源：
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷
关键词：
D O I：
10.1557/PROC-512-297
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1 x 10(18) cm(-3) and 1.2 x 10(19) cm(-3). Significant coupling of the Al longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. This data is compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation.
引用
收藏
页码：297 / 301
页数：5
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