Large area optical characterization of 3 and 4 inches 4H-SiC wafers

被引：2
|
作者：
Canino, A. [1 ]
Piluso, N. [1 ]
La Via, F. [1 ]
机构：
[1] CNR, IMM, I-95121 Catania, Italy
来源：
THIN SOLID FILMS | 2012年 / 522卷
关键词：
Photoluminescence; 4H-SiC; Raman; Stacking faults; GROWN STACKING-FAULTS;
D O I：
10.1016/j.tsf.2012.02.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Whole 4H-SiC 3 and 4 inches wafers optical characterization is a rapid system for assessing the quality of substrates and epitaxial layers. Spatially resolved micro-photoluminescence (mu PL) and micro-Raman (mu R) spectroscopy are performed on large areas allowing obtaining several structural properties as extended defect surface density, doping concentration uniformity, stress field of wafers. With our modified apparatus it is possible to perform mu PL and mu R fast characterization with the same resolution on the same area. Moreover it is easy to perform high resolution mu PL and mu R analyses on critical areas, i.e. high defective areas, for device manufacturing. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：30 / 32
页数：3
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