An embedded 170-mW 10-bit 50-MS/s CMOS ADC in 1-mm2

被引：0
|
作者：
Bult, K [1 ]
Buchwald, A [1 ]
机构：
[1] Broadcom Corp, Irvine, CA USA
来源：
ANALOG CIRCUIT DESIGN: RF ANALOG-TO-DIGITAL CONVERTERS; SENSOR AND ACTUATOR INTERFACES; LOW-NOISE OSCILLATORS, PLLS AND SYNTHESIZERS | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A distributed-gain preamplifier uses averaging to improve resolution by 4-bits in DNL, and 2-bits in INL in a flash ADC. Fabricated in a 0.5-mu m, triple-metal, single-poly CMOS process, the circuit measures 1.4-mm x 1.4-mm including a bandgap and a S&H, while the ADC itself occupies 1-mm(2). At a conversion rate of 50-MS/s the untrimmed ADC dissipates 170-mW and exhibits 54-dB S/ (N+D) with a 12-MHz 90% full-scale input.
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收藏
页码：49 / 63
页数：15
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