Pyramid nano-voids in GaN and InGaN

被引:0
|
作者
Yankovich, A. B. [1 ]
Kvit, A. V. [1 ]
Liu, H. Y. [2 ]
Li, X. [2 ]
Zhang, F. [2 ]
Avrutin, V. [2 ]
Izyumskaya, N. [2 ]
Ozgur, U. [2 ]
Morkoc, H. [2 ]
Voyles, P. M. [1 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA
[2] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA
来源
GALLIUM NITRIDE MATERIALS AND DEVICES VII | 2012年 / 8262卷
关键词
aberration-corrected STEM; void; InGaN; GaN; quantum wells; light emitting diode; LIGHT-EMITTING-DIODES; TRANSMISSION ELECTRON-MICROSCOPY; DEFECT FORMATION; DOPED ZNO; V-DEFECTS; QUANTUM; DISLOCATIONS; FILMS; MICROSTRUCTURE; RESOLUTION;
D O I
10.1117/12.912097
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High resolution transmission electron microscopy and aberration-corrected scanning transmission electron microscopy (STEM) reveal a new void defect in GaN, Si-doped GaN, and InGaN. The voids are pyramid shaped with symmetric hexagonal {0001} base facets and {10 (1) over bar1} side facets. The pyramid void has a closed or open core dislocation at the peak of the pyramid, which continues up along the [0001] growth direction. The closed dislocations have a 1/3 < 11 (2) over bar0 > edge dislocation Burgers vector component, consistent with known threading dislocations. The open core dislocations are hexagonal shaped with pure screw character, {10 (1) over bar0} side facets, varying lateral widths, and varying degrees of hexagonal symmetry. STEM electron energy loss spectroscopy spectrum imaging revealed a larger C concentration inside the void and below the void than above the void. We propose that carbon deposition during metal organic chemical vapor deposition growth acts as a mask, stopping the GaN deposition locally. Subsequent layers of GaN deposited around the C covered region create the overhanging {10 (1) over bar1} facets, and the meeting of the six {10 (1) over bar1} facets at the pyramid's peak is not perfect, resulting in a dislocation.
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页数:9
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